The new RF portfolio includes the industry’s first quad-channel TX VGA,Offers a wide frequency range and higher isolation in a smaller package.

TOKYO, Japan, January 20, 2021 – Renesas Electronics Group (TSE: 6723), a global supplier of semiconductor solutions, today announced four new high-reliability, high-performance products to enhance its traditional macro base station (BTS) RF product portfolio, bringing customers complete RF signal chain solutions. The expansion includes the industry’s first four-channel F4482/1 TX variable gain amplifier (VGA) and the F011x series of dual-channel first-stage low-noise amplifiers (LNA). The new family also includes the F1471 RF driver amplifier, the first high-power pre-driver with a P1dB greater than 1/2W, and the F2934 RF switch with higher isolation in a smaller package for the DPD feedback path.

The expanded product portfolio provides the high performance, high reliability, flexibility and small form factor required for 5G macro base station systems, with excellent performance over a wide range of environmental conditions and frequency bandwidths. The new product integrates innovative Renesas Smart SiliconTM technology, enabling related functions to be implemented in a smaller package—a unique advantage for multi-antenna systems.

“As the 5G transition accelerates, we have upgraded the receive and transmit chain components of our macro base station product portfolio with higher performance and higher We are pleased to continue to introduce new cutting-edge circuit designs and implement complete RF signal chains with new products, enabling customers to be 5G compliant as they bring their next-generation macro base station systems to market.”

Macro base station customers can combine these new products with the recently announced F1490 high gain RF amplifier and the highly integrated F0443 RX VGA to build a complete RF signal chain solution.

The expanded macro base station product portfolio includes:

Highly integrated F4482/1 Quad TX VGA

  • RF frequency range from 400MHz to 2800MHz
  • Balun, low-pass filter, amplifier and digital step attenuator integrated on a single chip
  • Renesas Zero DistorTIonTM technology improves service quality and increases dynamic range; Glitch-FreeTM technology protects PA components and simplifies DPD design

Dual channel F011x first stage LNA (balanced LNA or dual channel LNA)

  • RF frequency range from 650MHz to 2700MHz
  • 0.55dB low noise figure and low return loss at 2600MHz (-27dB input, -23dB output)

High Linearity F1471 RF Driver Amplifier

  • RF frequency range from 400MHz to 4200MHz with 17dB gain
  • OIP3 up to 38dBm, OP1dB is 28.5dBm at 2600MHz
  • Adjustable OIP3 performance and DC bias for tuning flexibility

High Reliability SP2T F2934 RF Switch

  • RF frequency range from 50MHz to 6000MHz
  • Higher isolation (70dB at 1GHz and 2GHz, 74dB at 3GHz, 67dB at 4GHz) in a small 3×3 QFN package, which solves the problem of PCB space constraints
  • Renesas KzTM Constant Impedance Technology Maintains VSWR During Switching Transitions

Renesas’ strong innovation in circuit design meets the evolving needs of the wireless infrastructure market. Renesas’ proprietary RF solutions with unique technological differences meet the needs of a wide range of applications, including massive MIMO and mmWave cellular base stations, communication systems, microwave (RF/IF), CATV, and test and measurement equipment.


The F4482/1, F011x, F1471 and F2934 are available now.

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