my country is the world's largest consumer market for power semiconductors; with the rise of the electric vehicle market; electric vehicles have become the main growth driver of the automotive industry in the future; the demand for new energy vehicles drives the continuous growth of MOSFETs and IGBTs; IGBT products as its core components have a broad market expectation.

IGBT is the core device of energy conversion and transmission, commonly known as the "CPU" of power electronic devices. Using IGBT for power conversion can improve the efficiency and quality of electricity consumption. It has the characteristics of high efficiency, energy saving and green environmental protection. The key supporting technology for emissions is known as the "core" of green energy.

At present, domestic thyristors, some diodes on wafers, protective devices, etc. are still dominated by 4-inch lines; planar thyristor chips, Schottky diodes, and IGBT modules are matched with high-voltage and high-current rectifier chips, with low capacitance and low residual voltage. Other protection device chips and some MOSFETs are mainstream with 6-inch lines;

There are five main IGBT devices used in electric vehicles (including inverters, DC/AC converters, on-board chargers, power monitoring systems and other auxiliary systems), among which, inverters, DC/AC converters and The on-board charger has the most critical influence on the performance of electric vehicles; IGBT is the key technology affecting the performance of electric vehicles, and its cost accounts for about 5% of the cost of the whole vehicle.

For electric vehicles, IGBT directly controls the conversion of direct and alternating current in the drive system, which determines the torque and maximum output power of the vehicle.

High-power IGBT is the key component of the electric vehicle motor system and the place where energy is lost. Once the efficiency of the motor system is improved, it will drive the speed of the electric vehicle, reduce the demand for the cooling system and improve the battery life;

Taiwan Mosi Electronics reduces wafer on-resistance, reduces IGBT manufacturing costs and achieves higher yields through six-inch wafers, and improves key components for electric vehicles. Infineon (Infineon), STMicroelectronics (ST) ) and other cases purchased by foreign manufacturers.

At present, the wafer diameters on the market are mainly 150mm, 200mm, and 300mm, corresponding to 6-inch, 8-inch, and 12-inch wafers respectively; domestic chips have an advantage in wafer production capacity, that is, 6 inches;

There are about 40 of the world's top 10 8" fabs, of which 33 are in Asia (15 in Taiwan and 8 in China). In 2019-2021, the production capacity will only expand by 5%, which is still not enough to meet the subsequent electric vehicle and industrial control markets. As a result, IGBT prices continue to rise.

The IGBT wafer launched by Taiwan Mosi Electronics Co., Ltd. represented by – P81MV022NL0013P is a 1200V, 40A, FS process 6-inch IGBT wafer; 1200V trench and field stop technology; low switching loss; positive temperature coefficient; simple parallel technology.

Chip map:

Mosi Electronics was established in 1987. The wafer manufacturing has long focused on the field of power semiconductor components and power management ICs, mainly MOS tubes, IGBTs, analog chips, diodes and other products, breaking the foreign monopoly.

ISweek and Mosi Electronics have joined forces to provide domestic customers with more effective technical support and professional services.

Leave a Reply

Your email address will not be published.