August 23, 2021 – mouser electronics, an electronic component distributor focusing on introducing new products and providing massive inventory, will start stocking qorvo from now on ® Qpd0011 high electron mobility transistor (HEMT). This silicon carbide based gallium nitride (GaN on SiC) transistor has excellent performance and can support cellular base stations and RF applications in 5g large-scale MIMO, LTE and WCDMA systems.
The qorvo qpd0011 prepared by MAOZe electronics is an asymmetric two-way amplifier, which adopts 7.0 mm × 6.5 mm small DFN package. Qpd0011 has a variable input power of 30 W to 60 W, + 48 V drain voltage, 3.3 GHz to. 6 GHz operating voltage, and a gain of up to 13.3 dB. It can achieve ultra-efficient signal peak power of up to 90 w in Doherty design environment.
In order to facilitate development, mouser also provides a supporting qpd0011evb1 evaluation board. This platform includes an example application circuit, which can speed up the prototype design when combined with the existing design. Qpd0011 is applicable to macro cell and micro cell base stations, active antennas and asymmetric Doherty design.