[September 8, 2021, Munich, Germany and Osaka, Japan] Infineon Technology Co., Ltd. (FSE: IFX / otcqx: ifnny) and Panasonic signed an agreement to jointly develop and produce the second generation (Gen2) mature gallium nitride (GAN) technology to provide higher efficiency and power density. The combination of outstanding performance and reliability with the production capacity of 8-inch silicon-based gallium nitride wafers marks Infineon’s strategic expansion of the growing demand for gallium nitride power semiconductors. According to the market demand, Gen2 will be developed as 650V GaN HEMT. These devices will be easy to use and provide higher cost performance, mainly for high-power and low-power SMPS applications, renewable energy, motor drive applications, etc.

For many designs, gallium nitride (GAN) has fundamental advantages over silicon. Compared with silicon MOSFET, gallium nitride HEMT has excellent specific dynamic on resistance and smaller capacitance, so it is more suitable for high-speed switching. The resulting energy saving and total system cost reduction can work at higher frequency, higher power density and overall system efficiency, making Gan a very attractive choice for design engineers.

Andreas urschitz, President of Infineon power and sensor systems division, said: “in addition to the same high reliability standard as the first generation, due to the shift to 8-inch wafer manufacturing, the next generation customers will benefit from easier transistor control and significantly improved cost positioning. Just like the first generation device jointly developed by both parties (i.e. Infineon’s coolgan) ™ And Panasonic x-gan ™), The second generation devices will be based on the normally closed silicon-based gallium nitride transistor structure, combined with the incomparable robustness of the hybrid drain embedded gate injection transistor (hd-git) structure, making these components the preferred products and one of the most long-term reliable solutions in the market. “

Tetsuzo uedai, deputy director of Engineering Department of Panasonic electric industrial solutions, said: “we are pleased to expand our partnership and cooperation with Infineon in gallium nitride components. Under this joint approach, we will be able to provide high-quality first and second-generation devices based on the latest innovative development.”


The new 650V Gan Gen2 device is planned to be launched in the first half of 2023.

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