Recently, Xinta Electronics, a third-generation semiconductor cutting-edge enterprise in China, officially announced the launch of a new generation of 1200V 40-80mΩ SiC MOSFETs. The device performance has reached the international leading level. This move marks that Coreta Electronics has made significant progress in the third-generation semiconductor field, further enriches the company’s product range, and demonstrates Coreta Electronics’ competitiveness in the domestic SiC field. At present, the product has been sold to domestic leading companies in the fields of military industry, new energy vehicles, photovoltaic energy storage, charging piles and other fields.
Core Tower Electronics’ New Generation SiC MOSFET Wafers and Devices
Core Tower Electronics’ new generation of SiC MOSFETs is based on the XM2.0 independent technology platform. After months of hard research, the technical team has carried out all-round design optimization for the chip layout, structure and process, and conducted multiple rounds of technical discussions and debugging with domestic partners to quickly complete the chip tapeout and obtain the expected chip test results. . The materials, design, foundry and other links of the new generation products are all completed in China, which is a pure domestic product in the true sense, which has accelerated the localization process of China’s SiC MOSFET devices.
Core Tower Electronics XinyiGeneration SiC MOSFET Selection Table
By optimizing the design and combining advanced wafer thinning technology, the technical team further improves the power density and efficiency of the device, which can be applied in a higher frequency environment, thereby greatly reducing the size of the peripheral circuit inductance, capacitor, filter and transformer, Compared with the previous generation products, it has smaller chip size, lower Miller capacitance and higher anti-interference ability. The new generation of products not only achieves higher cost performance, but also improves the dynamic characteristics of the device and obtains lower switching losses, so as to meet the market demand for high-performance, high-reliability new energy vehicles and high-end industrial power semiconductor devices.
Core Tower Electronics 1200V/40mΩ SiC MOSFET Performance Parameters
The low figure of merit QG x RDS(ON) of the SiC MOSFET device released by Core Tower Electronics is one of the biggest highlights of the product. The lower the figure of merit factor value, the smaller the comprehensive loss of the device and the higher the efficiency. Under the same test conditions, the figure of merit factor of Xinta Electronics’ 1200V/40mΩ SiC MOSFET is 25% lower than that of foreign C brands, which shows its advantages among similar brands.
Comparison of Figure of Merit Factors of Core Tower Electronic MOS Products
From the comparison chart with the performance parameters of the well-known foreign company C company, it can be seen that the new generation of 1200V/40mΩ SiC MOSFET of Coreta Electronics shows excellent characteristics in terms of on-resistance and gate charge. When TJ=150℃, the change rate of on-resistance of core tower electronic products is 1.3, and C company is 1.7, which is more advantageous and cost-effective than competing products.
1200V 40mΩ SiC MOSFET double-pulse comparison test waveform
1200V 40mΩ SiC MOSFET Double Pulse Comparative Test Data
According to the double-pulse test results, Core Tower Electronics’ 1200V/40mΩ SiC MOSFET is faster to turn on and off than the latest generation of competing products of the same specification from the well-known foreign company C Company, the turn-on loss is reduced by 14%, and the turn-off loss is reduced by 18%. . From the short-circuit current test results, under the test conditions of VDD = 600 V , VGS = 20 V , VGD = -5 V , RG = 25 Ω, the short-circuit time is ≤5μs, and the short-circuit current is 279A, reaching the performance of international first-line brand products.
1200V 80mΩ SiC MOSFET short circuit current test
Overall, the core tower electronic SiC MOSFET has the industry-leading figure of merit coefficient. In the application environment, it has the obvious advantages of low loss and high overall efficiency. The device performance and various technologies have reached the international first-class level. It is good to realize localized substitution.
Core Tower Electronics’ New Generation of SiC MOSFET Wafers
SiC MOSFET is a representative silicon carbide power device, and its high-frequency, high-efficiency, and high-temperature characteristics are especially suitable for application scenarios with stringent efficiency or temperature requirements. Compared with traditional silicon-based IGBTs, SiC MOSFETs can bring a series of system-level optimizations, including higher efficiency, higher power density, lower cooling requirements, and lower system-level costs, and can be widely used in new energy vehicles, photovoltaic energy storage, UPS , charging pile, power supply and other fields. With the continuous expansion of downstream demand, Xinta Electronics’ SiC devices will meet the needs of many target applications with internationally advanced performance and high reliability, and the company’s future development prospects will become more and more broad.
In today’s turbulent industry competition, Xinta Electronics has given a new strategic positioning. On the stage of global competition, Xinta people are determined to forge ahead, with a global vision and forward-looking ideas, innovation and change, and conform to the trend. In the future, Xinta Electronics will rely on China’s vast market advantages, strong team scientific research strength and industry resources to root in Anhui, and create a new generation of power semiconductor national brands. Continuously strengthen the cooperation and collaborative innovation of the domestic industrial chain, continue to promote the technological progress of the third-generation semiconductor industry, and help the national “two-carbon” strategy.